Silicon carbide (SiC) is a structural ceramic material with excellent properties. Silicon carbide parts, that is, equipment parts with silicon carbide and its composite materials as the main materials, have the characteristics of high density, high thermal conductivity, high bending strength, large elastic modulus, etc., and can adapt to the harsh reaction environment of strong corrosiveness and ultra-high temperature in wafer epitaxy, etching and other manufacturing links, so it is widely used in major semiconductor equipment such as epitaxial growth equipment, etching equipment, oxidation/diffusion/annealing equipment.