WSi (Tungsten Silicide) sputtering target material is a metal silicide ceramic material formed by the high-temperature synthesis of tungsten (W) and silicon (Si), specifically designed for magnetron sputtering coating in physical vapor deposition processes. Its chemical formula is typically WSi₂, and it serves as a core material for depositing high stability metal silicide films in semiconductor manufacturing, finding widespread application in the formation of transistor gates, contact layers, and interconnection structures.