1.Introduction
WTi target material refers to an alloy sputtering target made from tungsten (W) and titanium (Ti) in a specific ratio through powder metallurgy or melting processes. It is specifically designed for physical vapor deposition processes, particularly magnetron sputtering, to deposit high-performance metallic films on substrates such as semiconductor wafers and display panels.
2.Properties
High Barrier Properties: WTi thin films possess an extremely low diffusion coefficient, effectively preventing the diffusion of copper (Cu) atoms into the silicon substrate or dielectric layer, making them a crucial diffusion barrier material for copper interconnects in advanced processes;
Strong Adhesion: The reactive characteristics of titanium significantly enhance the bonding strength between the thin film and substrates (such as SiO₂, low-k dielectrics) and upper metal layers (such as Cu), thereby suppressing film delamination;
Low Resistivity: The optimized grain boundary structure results in a thin film resistivity lower than that of pure TiN and other compounds, reducing the resistance of interconnect lines.
High temperature oxidation resistance: In the high temperature environment of PVD cavity (300-500°C), WTi film maintains structural stability and inhibits performance degradation caused by oxidation.Corrosion resistance: It has strong resistance to etching gas and wet cleaning solution to ensure subsequent process compatibility.
Reaction sputtering adaptation: WTiN composite film can be sputtered in a mixed nitrogen/argon atmosphere to further improve the barrier performance and hardness.
Multilayer film integration: compatible with Ta/TaN, Co, Ru and other film materials, supporting complex laminated structure design;
3.Applications:
Advanced semiconductor manufacturing
Logic chip: Diffusion barrier layer in a high-k metal gate (HKMG). Key barrier/adhesion layers of Cu interconnect (e.g., Cu/WTiN/Ti/Si structure;
Memory chip: DRAM: capacitive electrode contact layer, bit/word line blocking layer;
3D NAND: conductive adhesion layer of staircase contacts;
Flat panel display manufacturing
TFT-LCD/OLED: source/leakage electrode and gate metallization layer of thin-film transistor (TFT);
Touch panel: conductive reinforcement layer below ITO to optimize touch sensitivity;
Compound semiconductors and power devices
GaN/SiC devices: adhesion layers with ohmic contact,
Power module: Metallized diffusion barrier layer on the chip surface to inhibit elemental interdiffusion at high temperatures.
Extend the application
Wear-resistant coating: WTiN hard film deposited on the surface of tools and bearings;
Decorative coatings: decorative coatings on the surface of high-end consumer electronics (such as gun gray tones);